H11F2M optocouplers equivalent, photo fet optocouplers.
* As a Remote Variable Resistor:
* ≤ 100 W to ≥ 300 MW
* ≤15 pF Shunt Capacitance
* ≥100 GW I/O Isolation Resistance
* As an Analog Switch:
* Extr.
The H11FXM series consists of a Gallium−Aluminum−Arsenide
IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distort.
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